Energy barrier height variations of Pd—Si Schottky diodes induced by deuterium

The depletion layer capacitance of palladium-silicon contacts at 0 V bias has been measured as a function of time during the exposure to the deuterium. The capacitance transient, from which the barrier height behavior can be readily deduced, has been compared with the transient obtained exposing the same diodes to the hydrogen. It has been found that the barrier height variation induced by the deuterium occurs in a time interval which is at least an order of magnitude shorter than the hydrogen induced one.