Title :
Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors
Author :
Asbeck, P.M. ; Miller, D.L. ; Babcock, E.J. ; Kirkpatrick, C.G.
Author_Institution :
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, CA
fDate :
4/1/1983 12:00:00 AM
Abstract :
Post-implant anneals of short (10-15 s) duration are compared with extended (10 min) furnace anneals for the fabrication of Be-implanted MBE-grown GaAlAs/GaAs heterojunction bipolar transistors. It is shown that the thermal pulse anneals can lead to improved Be-implant electrical activation in Ga0.7Al0.3As and GaAs, to improved contact resistance to Be-implanted GaAs, and to improved transistor characteristics. The transistor improvement is inferred to be due to a reduction in diffusion of the grown-in dopant profile.
Keywords :
Annealing; Contact resistance; Fabrication; Furnaces; Gallium arsenide; Heterojunction bipolar transistors; Implants; Molecular beam epitaxial growth; Plasma measurements; Plasma temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25656
