DocumentCode
1089184
Title
High-frequency noise in the output of DH (AlGa)As injection lasers with different structures and waveguiding mechanisms
Author
Biesterbos, Johannes W M ; Den Boef, Arie J.
Author_Institution
Philips Research Labs., Eindhoven, The Netherlands
Volume
17
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
701
Lastpage
706
Abstract
High-frequency (0.02-1.8 GHz) noise power measurements of both index- and gain-guided DH (AlGa)As injection lasers were carried out by means of single detector equipment. The index-guided structures include a new diffused index-guided type and some channeled substrate planar (CSP) structures, whereas the gain-guided lasers all have a stripe defined by proton bombardment, but they differ in the width of their stripe (
m) and the depth of the bombardment. From the measurements it was concluded ihat although, generally speaking, index-guided lasers show the lowest intensity noise level, the gain-guided lasers can approach this level, provided that their structure is optimized. The results of some of the various types of lasers studied are compared qualitatively with predictions of McCumber\´s theory.
m) and the depth of the bombardment. From the measurements it was concluded ihat although, generally speaking, index-guided lasers show the lowest intensity noise level, the gain-guided lasers can approach this level, provided that their structure is optimized. The results of some of the various types of lasers studied are compared qualitatively with predictions of McCumber\´s theory.Keywords
Gallium materials/lasers; Laser noise; Semiconductor device noise; DH-HEMTs; Fluctuations; Frequency; Laser noise; Laser theory; Optical noise; Power lasers; Power measurement; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071194
Filename
1071194
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