• DocumentCode
    1089185
  • Title

    Hydrogen-sensitive silicon tunnel MIS switching diodes

  • Author

    Kawamura, K. ; Yamamoto, T.

  • Author_Institution
    Shizuoka University, Johoku, Hamamatsu, Japan
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    Palladium thin SiO2-n-p+silicon switching diodes have been fabricated in which the turn-on voltage changes in proportion to the hydrogen concentration in the ambient gas. In the typical diode operated at 100°C, the switching voltage decreases from 5.1 to 3.6 V for 10 ppm hydrogen in air within 2 min and the off-state disappears for 100 ppm within 30 s. Hydrogen sensitivity is ascribed to the increase of a current gain in two transistor model of the device due to the change in palladium work-function.
  • Keywords
    Hydrogen; Impedance; MOSFETs; Ohmic contacts; Palladium; Schottky diodes; Silicon; Switches; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25658
  • Filename
    1483402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089185