• DocumentCode
    1089201
  • Title

    Optical properties of proton bombarded InP and GaInAsP

  • Author

    Leonberger, F.J. ; Walpole, J.N. ; Donnelly, J.P.

  • Author_Institution
    Lincoln Lab., M.I.T., Lexington, MA, USA
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • fDate
    6/1/1981 12:00:00 AM
  • Firstpage
    830
  • Lastpage
    832
  • Abstract
    The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A multienergy bombardment schedule was used in order to produce a uniformly bombarded layer 3 μm thick. The induced absorption, which increases nearly linearly with dose, extends well beyond the band edge and decreases nearly exponentially with wavelength over a broad range. A short 420°C anneal reduces this bombardment-induced absorption by more than a factor of ten.
  • Keywords
    Gallium materials/devices; Indium materials/devices; Infrared propagation, absorbing media; Proton radiation effects; Semiconductor device radiation effects; Absorption; Annealing; Gain measurement; Gallium arsenide; Indium phosphide; Optical attenuators; Optical buffering; Optical devices; Protons; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071196
  • Filename
    1071196