Title :
Optical properties of proton bombarded InP and GaInAsP
Author :
Leonberger, F.J. ; Walpole, J.N. ; Donnelly, J.P.
Author_Institution :
Lincoln Lab., M.I.T., Lexington, MA, USA
fDate :
6/1/1981 12:00:00 AM
Abstract :
The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A multienergy bombardment schedule was used in order to produce a uniformly bombarded layer 3 μm thick. The induced absorption, which increases nearly linearly with dose, extends well beyond the band edge and decreases nearly exponentially with wavelength over a broad range. A short 420°C anneal reduces this bombardment-induced absorption by more than a factor of ten.
Keywords :
Gallium materials/devices; Indium materials/devices; Infrared propagation, absorbing media; Proton radiation effects; Semiconductor device radiation effects; Absorption; Annealing; Gain measurement; Gallium arsenide; Indium phosphide; Optical attenuators; Optical buffering; Optical devices; Protons; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071196
