• DocumentCode
    1089223
  • Title

    Improvement in very thin gate oxide integrity by ion implantation

  • Author

    Baglee, D.A.

  • Author_Institution
    Texas Instruments, Houston, TX
  • Volume
    4
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.
  • Keywords
    Capacitors; Circuits; Electric breakdown; Electron devices; Ion implantation; Oxidation; Silicides; Silicon; Testing; Tungsten;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25661
  • Filename
    1483405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089223