DocumentCode
1089231
Title
A three-terminal double junction GaAs/GaAlAs cascade solar cell
Author
Flores, C.
Author_Institution
CISE, Milano, Italy
Volume
4
Issue
4
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
96
Lastpage
99
Abstract
This paper describes fabrication process and performances of a new type of monolithic solar cell with two junctions and bandgaps of 1.4 eV (GaAs) and 1.69 eV (GaAlAs) respectively, with the novel feature of only four epitaxial layers. The structure is a three-terminal device similar to a p-n-p transistor with a thick base. For the first prototypes, an overall conversion efficiency of 20.5 percent has been measured at 80 suns. It is expected that further optimization steps can lead to a conversion efficiency of 25 percent AM 1.5 for this structure.
Keywords
Epitaxial layers; Fabrication; Gallium arsenide; Optical filters; P-n junctions; Photonic band gap; Photovoltaic cells; Semiconductor materials; Substrates; Tin;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25662
Filename
1483406
Link To Document