Title :
Indium phosphide accumulation-mode field-effect transistors
Author_Institution :
University of California, San Diego, California
fDate :
4/1/1983 12:00:00 AM
Abstract :
Enhancement-type insulated gate field-effect transistors made of semi-insulating InP depend on the surface accumulation of electrons induced by a positive gate voltage and an equilibrium surface potential whose sign and magnitude are considered to be functions of the difference between charged surface donor and occupied acceptor states.
Keywords :
Contacts; Dielectric substrates; Electrons; FETs; Indium phosphide; Insulation; MISFETs; Metal-insulator structures; Predictive models; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25666
