• DocumentCode
    1089308
  • Title

    High-power and long-lifetime inGaN blue- violet laser diodes grown by molecular beam epitaxy

  • Author

    Tan, W.S. ; Kauer, M. ; Hooper, S.E. ; Barnes, J.M. ; Rossetti, M. ; Smeeton, T.M. ; Bousquet, V. ; Heffernan, J.

  • Author_Institution
    Sharp Labs. of Eur. Ltd., Oxford
  • Volume
    44
  • Issue
    5
  • fYear
    2008
  • Firstpage
    351
  • Lastpage
    352
  • Abstract
    InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers.
  • Keywords
    current density; gallium compounds; indium compounds; molecular beam epitaxial growth; ridge waveguides; semiconductor lasers; waveguide lasers; wide band gap semiconductors; InGaN; blue-violet laser diodes; continuous-wave lifetime; molecular beam epitaxy; ridge waveguide; slope efficiency; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083456
  • Filename
    4460766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089308