• DocumentCode
    1089333
  • Title

    Determination of source and drain parasitic resistances of HEMTs

  • Author

    Pouvil, P. ; Zemour, B. ; Pasquet, Daniel ; Gaubert, Jean

  • Author_Institution
    ENSEA, Cergy Pontoise, France
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    618
  • Lastpage
    620
  • Abstract
    A practical method to evaluate the parasitic source resistance Rs and drain resistance Rd of high electron mobility transistors (HEMTs) is presented. DC results for Rs and Rd can be used as initial values in the determination of linear and nonlinear equivalent circuits by optimisation.
  • Keywords
    electric resistance measurement; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC results; HEMTs; drain resistance; high electron mobility transistors; linear equivalent circuits; microwave performance; modelling; nonlinear equivalent circuits; optimisation; parasitic source resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920390
  • Filename
    133027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089333