Title :
InGaAs dual pin photodiode with minimised series resistance for low noise balanced receivers
Author :
Bauer, J.G. ; Albrecht, H. ; Ebbinghaus, G.
Author_Institution :
Siemens Res. Labs., Munchen, Germany
fDate :
3/26/1992 12:00:00 AM
Abstract :
Monolithically integrated planar front-illuminated InGaAs dual pin photodiodes (PD) with a series resistance less than 10 Omega have been fabricated for optical coherent receiver application. The PDs exhibit a very low dark current around 100 pA at -10 V, a high quantum efficiency (over 90%) and a 3 dB bandwidth of more than 10 GHz. The photosensitive area diameter is 50 mu m2, which offers large fibre alignment tolerances. A 2.5 dB improvement of the average input noise current density of an optical front end comprising the dual pin PD and a tuned electronic preamplifier has been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; 10 GHz; 10 ohm; 100 pA; 90 percent; InGaAs; average input noise current density; bandwidth; dual p-i-n photodiode; fibre alignment tolerances; low dark current; low noise balanced receivers; minimised series resistance; monolithic integration; optical coherent receiver; optical front end; photosensitive area diameter; quantum efficiency; tuned electronic preamplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920394
