Title :
Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on
Author :
Yoshida, Isao ; Katsuyama, Tomokazu ; Hashimoto, Jun ; Taniguchi, Yukinobu ; Hayashi, H.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
3/26/1992 12:00:00 AM
Abstract :
Room temperature (25 degrees C) 632.7 nm continuous wave operation of AlGaInP strained multiquantum well lasers has been achieved on
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 25 degC; 5 to 38 degC; 632.7 nm; AlGaInP-GaAs; CW mode; GaAs; room temperature CW operation; strained multiquantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920396
