Title :
High-order accurate approximation for MOSFET surface potential
Author :
Chang, S. ; Wang, G. ; Huang, Q. ; Wang, H.
Author_Institution :
Wuhan Univ., Wuhan
Abstract :
An improved analytical calculation for the MOSFET surface potential is introduced by virtue of a high-order approximation. This high-order analytical approximation improves the accuracy of the surface potential from 1 nV to 3 fV for typical design conditions yet with little additional computational effort. In particular, this new scheme extends the applicable range of the analytical approximation to cases of low voltage and high substrate concentration with desirable accuracy.
Keywords :
MOSFET; approximation theory; iterative methods; surface potential; MOSFET surface potential; Newton-Raphson iteration; analytical calculation; high-order accurate approximation; voltage 1 nV to 3 fV;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082874
