DocumentCode :
1089497
Title :
Single-mode semiconductor injection lasers for optical fiber communications
Author :
Nakamura, Michiharu ; Tsuji, Shinji
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
17
Issue :
6
fYear :
1981
fDate :
6/1/1981 12:00:00 AM
Firstpage :
994
Lastpage :
1005
Abstract :
The present status of mode-stabilized semiconductor injection lasers emitting in the 0.8-0.9 and 
m wavelength regions are described. The double-heterostructure GaAlAs/GaAs and InGaAsP/ InP crystals have been developed. Transverse-mode stabilization by means of gain guiding or index guiding is a key issue to realized high linearity, low noise operation. The mode-stabilized laser structures as well as the corresponding lasing characteristics are shown in detail. Longitudinal mode control is possible by grating feedback, but the fabrication technology is still immature. Reliability of the mode-stabilized lasers is also mentioned.
m wavelength regions are described. The double-heterostructure GaAlAs/GaAs and InGaAsP/ InP crystals have been developed. Transverse-mode stabilization by means of gain guiding or index guiding is a key issue to realized high linearity, low noise operation. The mode-stabilized laser structures as well as the corresponding lasing characteristics are shown in detail. Longitudinal mode control is possible by grating feedback, but the fabrication technology is still immature. Reliability of the mode-stabilized lasers is also mentioned.Keywords :
Bibliographies; Gallium materials/lasers; Optical fiber communication; Crystals; Fiber lasers; Gallium arsenide; Indium phosphide; Laser feedback; Laser modes; Laser noise; Linearity; Optical fiber communication; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071226
Filename :
1071226
Link To Document :
