• DocumentCode
    1089503
  • Title

    Ballistic transport in GaAs

  • Author

    Williams, C.K. ; Glisson, T.H. ; Littlejohn, M. ; Hauser, J.R.

  • Author_Institution
    North Carolina State University, Raleigh, NC
  • Volume
    4
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    161
  • Lastpage
    163
  • Abstract
    Ballistic transport in GaAs has been studied using an ensemble Monte Carlo simulation. Duration and spatial extent of ballistic transport for a hot electron distribution can be defined from such studies. Mean displacement of the ensemble increases quadratically with time for a specified interval. This observation provides a phenomenological definition of ensemble ballistic transport. This phenomenological definition is compared with a theoretical definition based on time at which a significant fraction of an ensemble have experienced at least one collision. From these studies, times and distances are given for which a single-particle ballistic equation and a Langevin equation accurately describe ensemble transport in GaAs.
  • Keywords
    Ballistic transport; Charge transfer; Effective mass; Electrons; Electrooptic effects; Equations; Gallium arsenide; Impurities; Kinetic energy; Photonic band gap;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25690
  • Filename
    1483434