DocumentCode
1089503
Title
Ballistic transport in GaAs
Author
Williams, C.K. ; Glisson, T.H. ; Littlejohn, M. ; Hauser, J.R.
Author_Institution
North Carolina State University, Raleigh, NC
Volume
4
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
161
Lastpage
163
Abstract
Ballistic transport in GaAs has been studied using an ensemble Monte Carlo simulation. Duration and spatial extent of ballistic transport for a hot electron distribution can be defined from such studies. Mean displacement of the ensemble increases quadratically with time for a specified interval. This observation provides a phenomenological definition of ensemble ballistic transport. This phenomenological definition is compared with a theoretical definition based on time at which a significant fraction of an ensemble have experienced at least one collision. From these studies, times and distances are given for which a single-particle ballistic equation and a Langevin equation accurately describe ensemble transport in GaAs.
Keywords
Ballistic transport; Charge transfer; Effective mass; Electrons; Electrooptic effects; Equations; Gallium arsenide; Impurities; Kinetic energy; Photonic band gap;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25690
Filename
1483434
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