High performance fully passivated InAlAs/InGaAs/InP HFET

Author

Dickmann, Juergen ; Haspeklo, H. ; Geyer, A. ; Daembkes, H. ; Nickel, H. ; Losch, R.

Author_Institution

Daimler-Benz AG, Res. Center Ulm, Germany

Volume

28

Issue

7

fYear

1992

fDate

3/26/1992 12:00:00 AM

Firstpage

647

Lastpage

649

Abstract

The fabrication of fully Si₃N₄ passivated lattice matched InAlAs/InGaAs/InP HFETs is reported. The DC IV-characteristics of 0.25 mu m gate length multigate finger devices show no kink or loop effects indicating excellent material quality. The drain to source breakdown voltage is in excess of V_DB>5 V. From the DC device characterisation a maximum saturation current of 490 mA/mm and a maximum transconductance of 500 mS/mm have been measured. A maximum current gain cutoff frequency of f_T=100 GHz and a maximum unilateral gain cutoff frequency as high as f_max=280 GHz have been achieved.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; passivation; silicon compounds; solid-state microwave devices; 0.25 micron; 100 GHz; 280 GHz; 5 V; DC device characterisation; HFETs; I/V characteristics; InAlAs-InGaAs-InP; Si₃N₄ passivation; drain to source breakdown voltage; fabrication; gate length; lattice matched; material quality; maximum current gain cutoff frequency; maximum unilateral gain cutoff frequency; microwave devices; multigate finger devices; passivated; saturation current; semiconductors; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920409

Filename

133046