DocumentCode
1089560
Title
Canyon lithography
Author
Dolan, G.J. ; Fulton, T.A.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
4
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
178
Lastpage
180
Abstract
We describe a simple resist structure for implementing brushfire lithography (BFL) in electron-beam writing. The outlines of the pattern features are written as narrow deep openings formed in a single layer of positive electron resist. An oblique evaporation of a metal film onto the surface yields outlined electrically isolated metal copies of the features. These can be toned by selective electrically controlled etching. Transfer of the metal pattern to the underlying resist completes the structure.
Keywords
Centralized control; Chromium; Dielectrics and electrical insulation; Electrons; Etching; Lithography; Proximity effect; Resists; Substrates; Writing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25696
Filename
1483440
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