• DocumentCode
    1089560
  • Title

    Canyon lithography

  • Author

    Dolan, G.J. ; Fulton, T.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    4
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    178
  • Lastpage
    180
  • Abstract
    We describe a simple resist structure for implementing brushfire lithography (BFL) in electron-beam writing. The outlines of the pattern features are written as narrow deep openings formed in a single layer of positive electron resist. An oblique evaporation of a metal film onto the surface yields outlined electrically isolated metal copies of the features. These can be toned by selective electrically controlled etching. Transfer of the metal pattern to the underlying resist completes the structure.
  • Keywords
    Centralized control; Chromium; Dielectrics and electrical insulation; Electrons; Etching; Lithography; Proximity effect; Resists; Substrates; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25696
  • Filename
    1483440