Title :
InGaAs double heterojunction bipolar transistors grown on GaAs substrates
Author :
Ito, H. ; Harris, James S.
Author_Institution :
Stanford Univ., CA, USA
fDate :
3/26/1992 12:00:00 AM
Abstract :
Lattice mismatched InGaAs double heterojunction bipolar transistors were fabricated on a GaAs substrate for the first time. A current gain of 20 was achieved with a base doping of 1019/cm3 in spite of the existence of a relatively high dislocation density.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; GaAs substrate; HBT; InGaAs; InGaAs-GaAs; base doping; current gain; double heterojunction bipolar transistors; high dislocation density; lattice mismatched heterojunctions; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920414
