DocumentCode :
1089569
Title :
Experimental determination of impact ionization coefficients in
Author :
Bulman, G.E. ; Robbins, V.M. ; Brennan, K.F. ; Hess, K. ; Stillman, G.E. ; Stillman, G.E.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
Volume :
4
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
181
Lastpage :
185
Abstract :
The room-temperature electron and hold impact ionization coefficients, α and β, respectively, have been determined for
Keywords :
Charge carrier processes; Doping; Electrons; Gallium arsenide; Impact ionization; Noise measurement; Performance evaluation; Photoconductivity; Schottky diodes; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25697
Filename :
1483441
Link To Document :
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