• DocumentCode
    1089596
  • Title

    Radiation effects in nitrided oxides

  • Author

    Terry, F.L., Jr. ; Aucoin, R.J. ; Naiman, M.L. ; Senturia, S.D.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    4
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    191
  • Lastpage
    193
  • Abstract
    Electron radiation effects on silicon dioxide films, before and after ammonia annealing (nitridation), have been studied. The most striking result is that the generation of radiation-induced interface states is nearly eliminated in the nitrided oxides.
  • Keywords
    Annealing; Capacitors; Electrons; Interface states; Packaging; Pollution measurement; Radiation effects; Silicon compounds; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25700
  • Filename
    1483444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089596