Title :
Radiation effects in nitrided oxides
Author :
Terry, F.L., Jr. ; Aucoin, R.J. ; Naiman, M.L. ; Senturia, S.D.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
6/1/1983 12:00:00 AM
Abstract :
Electron radiation effects on silicon dioxide films, before and after ammonia annealing (nitridation), have been studied. The most striking result is that the generation of radiation-induced interface states is nearly eliminated in the nitrided oxides.
Keywords :
Annealing; Capacitors; Electrons; Interface states; Packaging; Pollution measurement; Radiation effects; Silicon compounds; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25700
