Title :
Silicon boron delta doped FET: growth and growth and fabrication
Author :
Biswas, R.G. ; Mattey, N.L. ; Phillips, Jonathon ; Newstead, S.M. ; Whall, T.E. ; Taylor, Stephen ; Gundlach, A.
Author_Institution :
Dept. of Phys., Warwick Univ., Coventry, UK
fDate :
3/26/1992 12:00:00 AM
Abstract :
The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.
Keywords :
elemental semiconductors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; MBE; MOSFET; Si:B; delta doped FET; fabrication; field-effect transistor; gate dielectric; low temperature processing schedule; plasma enhanced oxide growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920422
