• DocumentCode
    1089640
  • Title

    Silicon boron delta doped FET: growth and growth and fabrication

  • Author

    Biswas, R.G. ; Mattey, N.L. ; Phillips, Jonathon ; Newstead, S.M. ; Whall, T.E. ; Taylor, Stephen ; Gundlach, A.

  • Author_Institution
    Dept. of Phys., Warwick Univ., Coventry, UK
  • Volume
    28
  • Issue
    7
  • fYear
    1992
  • fDate
    3/26/1992 12:00:00 AM
  • Firstpage
    667
  • Lastpage
    669
  • Abstract
    The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.
  • Keywords
    elemental semiconductors; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; MBE; MOSFET; Si:B; delta doped FET; fabrication; field-effect transistor; gate dielectric; low temperature processing schedule; plasma enhanced oxide growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920422
  • Filename
    133059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089640