Substrate influence on NMOS transistors in large-area laser crystallized isolated Si layers

Metal-gate NMOS transistors have been fabricated in isolated silicon layers prepared in high-temperature biased laser crystallization. The transistor parameters are strongly influenced by the substrate material, in our case simultaneously processed silica and silicon wafers. Stress built up in the silicon layer strongly affects the carrier mobility and may also significantly influence the threshold voltage, the kink voltage, as well as the back-channel leakage current.