DocumentCode :
1089664
Title :
12 ps GaAs double heterostructure step recovery diode
Author :
Tan, M.R.T. ; Wang, S.T. ; Mars, D.E. ; Moll, J.L.
Author_Institution :
Hewlett Packard Labs., Palo Alto, CA, USA
Volume :
28
Issue :
7
fYear :
1992
fDate :
3/26/1992 12:00:00 AM
Firstpage :
673
Lastpage :
675
Abstract :
A P+-i-N+ double heterostructure step recovery diode (DHSRD) is fabricated on Al0.3Ga0.7As/AlxGa1-xAs/Al0.3Ga0.7As with >14 V amplitude and a (10-90%) transition time of xGa1-xAs undoped charge storage layer with grading from x=0-0.15. The linear grading provides an electric field which confines the injected holes closed to the P+ exit region and also provides a drift field to accelerate hole removal during the reverse recovery process.
Keywords :
III-V semiconductors; gallium arsenide; p-i-n diodes; 12 ps; 40 mA; Al 0.3Ga 0.7As-Al xGa 1-xAs; DH type; GaAs; SRD; double heterostructure; drift field; electric field; injected holes; linearly graded bandgap; p +i-n + diode; reverse recovery process; step recovery diode; undoped charge storage layer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920425
Filename :
133062
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1089664
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