Title :
RF PECVD Characteristics for the Growth of Carbon Nanotubes in a CH4– N2 Mixed Gas
Author :
Yuji, Toshifumi ; Sung, Youl-Moon
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
Characteristics of radio-frequency plasma-enhanced chemical vapor deposition (PECVD) in the growth of carbon nanotubes (CNTs) in a CH4-N2 mixed gas were investigated through characterization of the prepared CNTs and a numerical simulation. Preparation of the CNTs was performed by the single chamber plasma process where the catalyst sputter deposition using a capacitively coupled plasma and the PECVD using an inductively coupled plasma were carried out in the same discharge chamber. The characterization results indicated the usefulness of the single chamber process system. It was also found that CH4, HCN, and C2H6 radicals mainly contributed to the growth of CNTs.
Keywords :
carbon nanotubes; high-frequency discharges; nitrogen; organic compounds; plasma CVD; sputter deposition; C - Element; CNT growth; N2 - Element; RF PECVD; capacitively coupled plasma; carbon nanotube growth; catalyst sputter deposition; discharge chamber; ethane radicals; hydrogen cynide radicals; inductively coupled plasma; methane-nitrogen mixed gas; plasma enhanced chemical vapor deposition; radiofrequency PECVD; single chamber plasma process; Carbon nanotubes; Chemical vapor deposition; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma simulation; Plasma sources; Radio frequency; Scanning electron microscopy; Sputtering; Capacitively coupled plasma (CCP); carbon nanotubes (CNTs); inductively coupled plasma (ICP); plasma-enhanced chemical vapor deposition (PECVD); single chamber process;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2007.896753
