Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

Author

Yi-Ruei Jhan ; Yung-Chun Wu ; Yu-Long Wang ; Yao-Jen Lee ; Min-Feng Hung ; Hsin-Yi Lin ; Yu-Hsiang Chen ; Mu-Shih Yeh

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

105

Lastpage

107

Abstract

Unlike the high-temperature activation of dopants, such as rapid thermal annealing (RTA), the activation of dopants by low-temperature microwave annealing (MWA) suppresses their diffusion, reducing screening tunneling length (λ). This letter compares low-temperature (490 °C) MWA with high-temperature (1050 °C) RTA of a fin-shaped polycrystalline silicon (Poly-Si) tunnel field-effect transistor (TFET). The band-to-band tunneling voltage (VBTBT) indicates clearly that TFET annealed by MWA had a lower λ than TFET that was annealed by RTA. The TFET that was annealed by MWA had a high ON/OFF current ratio of 10⁸, a low subthreshold swing, and an almost negligible drain-induced barrier lowering.

Keywords

field effect transistors; rapid thermal annealing; silicon; tunnel transistors; Si; band-to-band tunneling voltage; dopant activation; drain-induced barrier lowering; fin-shaped polycrystalline silicon; high-temperature RTA; low-temperature MWA; low-temperature microwave annealing; rapid thermal annealing; screening tunneling length; temperature 1050 C; temperature 490 C; tunnel field-effect transistor; Annealing; Logic gates; Microwave FETs; Silicon; Tunneling; Band-to-band tunneling (BTBT); Screening tunneling length (λ); Tunnel field-effect transistor (TFET); band-to-band tunneling (BTBT); microwave annealing (MWA); screening tunneling length ( $lambda $ );

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2386213

Filename

6997995