Title :
High efficiency integral III-N/II-VI blue-green laser converter
Author :
Sorokin, S.V. ; Sedova, I.V. ; Toropov, A.A. ; Yablonski, G.P. ; Lutsenko, E.V. ; Voinilovich, A.G. ; Danilchyk, A.V. ; Dikme, Y. ; Kalisch, H. ; Schineller, B. ; Heuken, M. ; Ivanov, S.V.
Author_Institution :
Quantum-Size Heterostruct. Lab., A.F. Ioffe Physico-Tech. Inst. of RAS, St. Petersburg
Abstract :
An integral optically-pumped laser converter comprising an ultra-low-threshold green (~540 nm) CdSe quantum dot laser chip pumped by a blue InGaN/GaN quantum well heterostructure laser grown on Si (111) substrates has been fabricated and studied. The maximum achieved quantum efficiency and pulse output power in green are as high as 14% and 3 W, respectively
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; elemental semiconductors; gallium compounds; indium compounds; optical pumping; quantum well lasers; semiconductor growth; semiconductor quantum dots; silicon; wide band gap semiconductors; 3 W; CdSe; CdSe quantum dot laser chip; InGaN-GaN; blue InGaN/GaN quantum well heterostructure laser; integral III-N/II-VI blue-green laser converter; integral optically-pumped laser converter; pulse output power; quantum efficiency; ultra-low-threshold green laser;
Journal_Title :
Electronics Letters
