• DocumentCode
    1089903
  • Title

    Fully isolated lateral bipolar—MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2

  • Author

    Tsaur, B-Y. ; Silversmith, D.J. ; Fan, J.C.C. ; Mountain, R.W.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    4
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    271
  • Abstract
    A four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared by graphite-strip-heater zone-melting recrystallization. Common-emitter current gain close to 20 and emitter-base breakdown voltage in excess of 10 V have been obtained for bipolar operation. As a MOSFET, the device exhibits well-behaved enhancement-mode characteristics with a field-effect mobility of ∼ 600 cm2/V.s and drain breakdown voltage exceeding 15 V.
  • Keywords
    Bipolar transistors; Fabrication; Implants; Ion implantation; MOSFET circuits; Pulse measurements; Semiconductor films; Silicon on insulator technology; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25729
  • Filename
    1483473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089903