• DocumentCode
    1089928
  • Title

    Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam

  • Author

    Tsang, W.T. ; Ditzenberger, J.A. ; Olsson, N.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    4
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    275
  • Lastpage
    277
  • Abstract
    We report the use of an As2(instead of As4) beam during molecular beam epitaxial (MBE) growth of GaxAlyIn1-x-yAs layers, lattice-matched to InP substrate. We also show that use of the As2beam improves the room-temperature photoluminescence intensities of both In0.53Ga0.47As and Ga0.39Al0.08In0.53As epilayers with more significant improvement for the latter. The substrate temperature employed was ∼ 580°C for both.
  • Keywords
    Artificial intelligence; Avalanche photodiodes; Gallium arsenide; Indium phosphide; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Photoluminescence; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25731
  • Filename
    1483475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089928