Wavelength multiplexing DH AlGaAs injection laser source with a graded composition along the active layer

The use of DH (AlGa)As wafers with graded composition along the active layer for creation of multiwavelength laser source for a wavelength-division-multiplexing systems is proposed. The possibility of obtaining such structures by the LPE method under the condition of isothermal mixing is investigated. Electroluminescence measurements show that significant variation of emission wavelength along the structure does not cause the increase in threshold current density above a common level. The source fabricated is a set of monolithically integrated DBR lasers. Similarity of experimental dispersion of the effective guide indexes and that of refractive indexes of guide material facilitates the choice of DBR grating periods.