DocumentCode
1089993
Title
Three-gate MOSFET Providing independent control of transconductance and output resistance
Author
Chang, S.H. ; Boyd, J.T. ; Nevin, J.H.
Author_Institution
University of Cincinnati, Cincinnati, OH
Volume
4
Issue
8
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
289
Lastpage
291
Abstract
A three-gate MOS transistor is demonstrated. Measurements of operating characteristics illustrate the availability of excellent control of the transconductance while simultaneously maintaining very high output resistance. In analog circuit applications, the three-gate device provides additional advantages including better signal isolation, less nonlinearity, and adjustable mismatch in a differential amplifier. A range of operating voltages over which the transconductance is constant is observed.
Keywords
Analog circuits; Availability; Capacitance; Differential amplifiers; Digital circuits; Electrical resistance measurement; Inverters; MOSFET circuits; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25736
Filename
1483480
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