DocumentCode
1090004
Title
A silicon phototransistor with a MIS tunnel junction emitter
Author
Shieh, C.-L. ; Wagner, S. ; Jackel, L.D. ; Howard, R.E. ; Hu, E.L.
Author_Institution
Princeton University, Princeton, NJ
Volume
4
Issue
8
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
291
Lastpage
293
Abstract
We have fabricated a silicon phototransistor using low-temperature processing. The emitter of the bipolar transistor is an Al-SiO2 -p-Si tunnel junction. The quantum efficiency gain is 200 at λ = 0.6328 µm. The common-emitter current gain of the analogous three-terminal metal-insulator-semiconductor (MIS) transistor also is 200. This demonstrates the high minority-carrier injection efficiency of the MIS emitter.
Keywords
Artificial intelligence; Metal-insulator structures; Phototransistors; Plasma applications; Plasma devices; Plasma stability; Plasma temperature; Schottky barriers; Schottky diodes; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25737
Filename
1483481
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