DocumentCode
1090052
Title
High frequency (f=2.37 GHz) room temperature operation of 1.55 μm AlN/GaN-based intersubband detector
Author
Giorgetta, F.R. ; Baumann, E. ; Guillot, F. ; Monroy, E. ; Hofstetter, D.
Author_Institution
Inst. of Phys., Univ. of Neuchatel
Volume
43
Issue
3
fYear
2007
Firstpage
185
Lastpage
186
Abstract
The fabrication and high frequency operation of a room temperature 1.55 mum intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor superlattices; wide band gap semiconductors; 1.55 micron; 2.37 GHz; AlN-GaN; QWIP structure; high frequency room temperature operation; intersubband detector; photoconductive quantum well infrared photodetectors; photovoltaic device; sinusoidally modulated laser beam detection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
4087806
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