Title :
Ultra-broad-band GaAs monolithic direct-coupled feedback amplifiers
Author :
Imai, Y. ; Ito, H. ; Ohwada, K. ; Sugeta, T.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
9/1/1983 12:00:00 AM
Abstract :
GaAs monolithic direct-coupled amplifiers with load resistor and feedback resistor have been developed. The fabricated amplifier using the self-aligned implantation for n+-layer technology (SAINT) FET´s has a 10-dB gain, a 7.2-dB noise figure, and input VSWR less than 2.0 over the frequency range from dc to 4 GHz.
Keywords :
Bandwidth; FETs; Feedback amplifiers; Frequency; Gallium arsenide; Impedance matching; Low-noise amplifiers; Noise figure; Resistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25749
