• DocumentCode
    1090218
  • Title

    Transconductance compression in submicrometer GaAs MESFET´s

  • Author

    Chen, C.L. ; Wise, K.D.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    4
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    The transconductance compression phenomenon in GaAs MESFET´s is known to depend on the gate metal, processing, and the gate length. This phenomenon is thought to be caused by the depletion region under the free surface between gate and drain. Based on this assumption, a new model is proposed which is able to explain the experimental results for 0.25-µm gate-length devices satisfactorily.
  • Keywords
    Circuit simulation; Electrons; Gallium arsenide; Laboratories; MESFETs; MOSFET circuits; Microwave devices; Physics; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25756
  • Filename
    1483500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090218