DocumentCode
1090230
Title
Moderate inversion in SOI MOSFET´s with grain boundaries
Author
Ortiz-Conde, A. ; Fossum, J.G.
Author_Institution
University of Florida, Gainesville, FL
Volume
4
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
344
Lastpage
346
Abstract
Our previous model for the effects of grain boundaries on the strong-inversion (linear region) conductance of silicon-on-insulator (SOI) MOSFET´s is extended to account for moderate inversion. The extension, which is supported by measurements of laser-recrystallized devices, predicts a nearly exponential dependence for the conductance on the (front) gate voltage that is controlled by the grain boundaries.
Keywords
Dielectric measurements; Grain boundaries; Helium; Integrated circuit measurements; Laser modes; Optical control; Semiconductor films; Silicon on insulator technology; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25757
Filename
1483501
Link To Document