Title :
Zn-Implanted GaAs with minimized annealing redistribution
Author :
Davies, D.E. ; McNally, P.J.
Author_Institution :
Rome Air Development Center, Hanscom Air Force Base, MA
fDate :
10/1/1983 12:00:00 AM
Abstract :
Redistribution associated with the annealing of high-dose Zn implants has been investigated in GaAs. Annealing times as short as ∼ 1 s have been implemented through direct radiant heating from an incoherent light source. It is shown that Zn can redistribute to depths of ∼ 1 µm even on annealing for only 10 s. Shallower layers (∼ 0.25 µm) and close to anticipated As-implanted depths require a further reduction in the annealing time to ∼ 1 s.
Keywords :
Annealing; Doping; Gallium arsenide; Heating; Implants; Laboratories; Lamps; Light sources; Temperature; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25761
