Amorphous-Silicon gate GaAs FET´s

Silicon-germanium-boron ternary amorphous alloy has been applied to GaAs FET as a gate contact material. A good Schottky contact with a barrier height as large as 0.94 V has been realized. Schottky-barrier gate GaAs FET´s fabricated using the amorphous film as a gate contact layer exhibit excellent normally off FET characteristics of a large saturated drain curent, which has never been attained by conventional GaAs MESFET´s.