• DocumentCode
    1090281
  • Title

    Amorphous-Silicon gate GaAs FET´s

  • Author

    Suzuki, M. ; Murase, K. ; Asai, K. ; Kurumada, K.

  • Author_Institution
    NTT, Atsugi-shi, Japan
  • Volume
    4
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    358
  • Lastpage
    359
  • Abstract
    Silicon-germanium-boron ternary amorphous alloy has been applied to GaAs FET as a gate contact material. A good Schottky contact with a barrier height as large as 0.94 V has been realized. Schottky-barrier gate GaAs FET´s fabricated using the amorphous film as a gate contact layer exhibit excellent normally off FET characteristics of a large saturated drain curent, which has never been attained by conventional GaAs MESFET´s.
  • Keywords
    Amorphous materials; FETs; Gallium arsenide; MESFET integrated circuits; P-n junctions; Plasma applications; Schottky barriers; Schottky diodes; Semiconductor films; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25762
  • Filename
    1483506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090281