DocumentCode
1090299
Title
Modeling thermal effects on MOS I-V characteristics
Author
Sharma, D.K. ; Ramanathan, K.V.
Author_Institution
TATA Institute of Fundamental Research Kolaba, Bombay, India
Volume
4
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
362
Lastpage
364
Abstract
The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV characteristics of a MOS device as modified by thermal effects are calculated. The predicted behavior matches reported experimental observations; in particular, the negative dynamic resistance seen in the saturation region of devices operating at elevated power densities.
Keywords
Equations; MOS devices; MOSFETs; Power dissipation; Power system modeling; Solid state circuits; Temperature dependence; Temperature distribution; Thermal conductivity; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25764
Filename
1483508
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