Title :
A New X-Band Low Phase-Noise Multiple-Device Oscillator Based on the Extended-Resonance Technique
Author :
Choi, Jonghoon ; Mortazawi, Amir
Abstract :
A novel multiple-device oscillator based on the extended-resonance technique is proposed. This oscillator achieves low phase noise through optimizing the circuit´s group delay. Based on this technique, an X-band four-device SiGe HBT oscillator has been designed, fabricated, and tested. The measured phase noise is - 119 dBc at 100-kHz offset frequency. To the authors´ best knowledge, this oscillator shows the lowest phase-noise performance among other reported X-band microwave planar hybrid free-running oscillators.
Keywords :
Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; microwave oscillators; phase noise; semiconductor materials; HBT oscillator; SiGe - Interface; X-band low phase-noise multiple-device oscillator; extended-resonance technique; frequency 100 kHz; microwave oscillators; Circuit testing; Delay; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave oscillators; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Extended resonance; microwave oscillators; oscillator noise; phase noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2007.901612
