Title :
A high speed optoelectronic matrix switch using heterojunction switching photodiodes
Author :
Hara, Elmer H. ; Machida, Susumu ; Ikeda, Masahiro ; Kanbe, Hiroshi ; Kimura, Tatswa
fDate :
8/1/1981 12:00:00 AM
Abstract :
Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3 × 3 optoelectronic matrix switch. Biconical taper type optical power splitters were used to distribute the signals to the matrix switch crosspoints. Isolation and crosstalk losses were better than 63 dB over a frequency range of 10 Hz-400 MHz and 400 Mbit/s NRZ digital signals were switched with switching times shorter than 30 ns.
Keywords :
Electrooptic switches; Gallium materials/devices; Photodiodes; Semiconductor diode switches; Frequency; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical crosstalk; Optical losses; Optical signal processing; Optical switches; Photodiodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071301
