• DocumentCode
    1090396
  • Title

    Spatially resolved observation of visible-light emission from Si MOSFET´s

  • Author

    Tam, S. ; Hsu, F.-C. ; Ko, P.K. ; Hu, C. ; Muller, R.S.

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    4
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    386
  • Lastpage
    388
  • Abstract
    Light emission from Si MOSFET´s operating in the saturation region is observed. This observation provides direct evidence for the phenomenon of photocarrier generation in the substrate of VLSI´s. The light emission appears to be uniform along the device width and emanates from the drain end of the MOSFET under normal operation. Light spots of much higher intensity are observed when the device is biased into the snap-back regime. This provides insights into the mechanism of snap-back breakdown.
  • Keywords
    Electric breakdown; Ionization; MOSFET circuits; P-n junctions; Photonic band gap; Random access memory; Read-write memory; Spatial resolution; Stability; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25773
  • Filename
    1483517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090396