DocumentCode
1090450
Title
Millimeter-wave GaAs distributed IMPATT diodes
Author
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution
Texas Instruments Incorporated, Dallas, TX
Volume
4
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
393
Lastpage
395
Abstract
Millimeter-wave oscillations were obtained in distributed GaAs IMPATT diodes prepared by molecular beam epitaxy (MBE). Both single-drift-region and double-drift-region structures were used to fabricate various length devices, up to 1.25 mm, to investigate oscillation frequency dependence on device length. Output power levels of 1.5 and 0.5 W were obtained at 22 and 50 GHz, respectively, using 500-ns pulses. The highest frequency of oscillation observed was 89 GHz.
Keywords
Bonding; Diodes; Equivalent circuits; Frequency; Gallium arsenide; Millimeter wave circuits; Millimeter wave technology; Molecular beam epitaxial growth; Power generation; Resonance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25777
Filename
1483521
Link To Document