DocumentCode
1090464
Title
Experimental performance of the buried-channel acoustic charge transport device
Author
Hoskins, M.J. ; Bogus, E.G. ; Hunsinger, B.J.
Author_Institution
University of Illinois, Urbana, IL
Volume
4
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
396
Lastpage
399
Abstract
High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.
Keywords
Acoustic devices; Acoustic measurements; Acoustic waves; Charge coupled devices; Clocks; Electrons; Frequency measurement; Gallium arsenide; Surface acoustic wave devices; Surface acoustic waves;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25778
Filename
1483522
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