• DocumentCode
    1090479
  • Title

    Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices

  • Author

    Kumar, K. ; Foulds, K.W.H.

  • Author_Institution
    Nanyang Technological Institute, Singapore
  • Volume
    4
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    399
  • Lastpage
    402
  • Abstract
    Experiments on-deeply diffused Si TRAPATT diodes have given direct evidence of small-signal negative resistance at both VHF (30-80 MHz) and at the design TRAPATT frequency of 2 GHz.
  • Keywords
    Circuit optimization; Coaxial components; Diodes; Frequency; Oscillators; Pulse modulation; Reflection; Tuning; VHF circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25779
  • Filename
    1483523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090479