DocumentCode :
1090485
Title :
Strained InGaAs quantum well lasers grown on
Author :
Wang, W.I.
Volume :
28
Issue :
8
fYear :
1992
fDate :
4/9/1992 12:00:00 AM
Firstpage :
705
Lastpage :
706
Abstract :
The growth by molecular beam epitaxy (MBE) of AlGaAs/GaAs/InGaAs strained quantum well lasers on GaAs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical losses; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; AlGaAs-GaAs-InGaAs; GaAs; III-V semiconductors; broad area lasers; internal loss; molecular beam epitaxy; strained quantum well lasers; surface emitting blue-green light sources; transparency current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920446
Filename :
133085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1090485
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