Title :
High-transconductance enhancement-mode GaAs MESFET fabrication technology
Author :
Onuma, T. ; Tamura, A. ; Uenoyama, T. ; Tsujii, H. ; Nishii, K. ; Yagita, H.
Author_Institution :
Matsushita Electric Industrial Company, Ltd., Osaka, Japan
fDate :
11/1/1983 12:00:00 AM
Abstract :
An improved enhancement-mode GaAs MESFET was fabricated by a high dose Si ion implantation which was used to reduce the source and drain parasitic resistances, and by a Pt buried gate which was used to control the threshold voltage and reduce the interface states of the Schottky gate. 250 mS/mm transconductance has been obtained for 1-µm gate-length enhancement-mode GaAs MESFET.
Keywords :
Argon; Atmosphere; Energy states; FETs; Fabrication; Gallium arsenide; Ion implantation; MESFETs; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25782
