DocumentCode
1090575
Title
Benefits of real-time, in situ particle monitoring in production medium current implantation
Author
Borden, Peter G. ; Larson, Lawrence A.
Author_Institution
High Yield Technol., Mountain View, CA, USA
Volume
2
Issue
4
fYear
1989
fDate
11/1/1989 12:00:00 AM
Firstpage
141
Lastpage
145
Abstract
Real-time free particle measurements in the loadlocks of a production medium current implanter have been conducted. These measurements correlate to both surface scans and electrical test yield. They suggest that episodic particle generating events that impact yield occur frequently and that particle levels are considerably higher when product wafers are run than when monitor wafers are run. The data correlate to monitor wafer surface counts, allowing the real-time monitor to be used in equipment requalification. The data also provide a real-time plot of machine utilization and performance and can be useful in identifying variations in both the implant process and feeder processes. It is concluded that a strategy of in situ, real-time sampling combined with test wafer monitoring can lead to improved particle control
Keywords
ion implantation; measurement by laser beam; monitoring; particle counting; semiconductor device manufacture; semiconductor doping; episodic particle generating events; equipment requalification; implanter loadlocks; in situ sampling; laser based sensor; particle control; particle monitoring; production medium current implantation; real time free particle measurements; real-time monitor; test wafer monitoring; Contamination; Monitoring; Particle measurements; Particle production; Pollution measurement; Process control; Pumps; Sampling methods; Sensor phenomena and characterization; Testing;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.44617
Filename
44617
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