• DocumentCode
    1090675
  • Title

    p-type thin-film transistors with vacuum-deposited crystallized copper-doped germanium films

  • Author

    Fischer, A.G. ; Tizabi, D.J. ; Blanke, H.

  • Author_Institution
    University of Dortmund, Dortmund, Germany
  • Volume
    4
  • Issue
    12
  • fYear
    1983
  • fDate
    12/1/1983 12:00:00 AM
  • Firstpage
    447
  • Lastpage
    448
  • Abstract
    Copper-doped 10-nm-thick vacuum-deposited Ge films between vitreous aluminosilicate insulator films can be crystallized at 400°C, with hole mobilities of 80 cm2/V.s. They yield stable p-type TFT´s with 105on/off ratio which are process-compatible with n-type CdSe TFT´s and thus usable for complementary on-board shift registers in active matrix displays.
  • Keywords
    Active matrix liquid crystal displays; Amorphous materials; Crystalline materials; Crystallization; Germanium; Inorganic materials; Insulation; Semiconductor materials; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25797
  • Filename
    1483541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090675