Title :
GaAs CCD´s with transparent (ITO) gates for imaging and optical signal processing
Author :
Sahai, R. ; Pierson, R.L., Jr. ; Anderson, R.J. ; Martin, E.H. ; Sovero, E.A. ; Higgons, J.A.
Author_Institution :
Rockwell International, Thousand Oaks, CA
fDate :
12/1/1983 12:00:00 AM
Abstract :
Sputtered indium tin oxide (ITO) film is used as the transparent Schottky gate material for GaAs CCD´s. In addition the gigahertz clocking-rate capability of GaAs CCD´s makes them attractive for high-speed optical signal processing applications. The operation of the GaAs CCD´s with fixed-aperture mask over the transparent gates is reported here. Such structures are basic components of a GaAs CCD-based electrooptic processor (EOP).
Keywords :
Annealing; Charge coupled devices; Conductivity; Gallium arsenide; High speed optical techniques; Indium tin oxide; Optical films; Optical imaging; Optical signal processing; Schottky barriers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25803
