Title :
4-40 GHz MMIC distributed active combiner with 3 dB gain
Author :
Majidi-Ahy, R. ; Nishimoto, C. ; Russell, John ; Ou, Weixin ; Bandy, S. ; Zdasiuk, G. ; Shih, Chih-Cheng ; Pao, Y.C. ; Yuen, Chau
Author_Institution :
Litton Solid State, Santa Clara, CA, USA
fDate :
4/9/1992 12:00:00 AM
Abstract :
The development of a 4-40 GHz monolithic InP HEMT distributed active combiner is reported. This MMIC had an average gain of 3.0 dB from each input, and a minimum reverse isolation of 20 dB from 4 to 40 GHz. The active devices in this MMIC were 0.25 mu m lattice-matched InGaAs-InAlAs-InP HEMTs. CPW was used as the transmission medium with an overall chip dimension of 1.0*1.0 mm2.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; 0.25 micron; 3 dB; 4 to 40 GHz; CPW; HEMT; InGaAs-InAlAs-InP; MMIC; distributed active combiner; lattice-matched; monolithic microwave IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920468
